| 深亚微米部分耗尽SOI MOSFETs STI应力效应研究 |
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| 引用本文： | 卜建辉,李书振,罗家俊,韩郑生. 深亚微米部分耗尽SOI MOSFETs STI应力效应研究[J]. 半导体学报, 2014, 35(3): 034008-3 |
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| 作者姓名： | 卜建辉 李书振 罗家俊 韩郑生 |
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| 摘 要： | The STI stress effect is investigated based on the 0.13 m SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences（IMECAS）. It shows that the threshold voltage and mobility are all affected by the STI stress. The absolute value of the threshold voltage of NMOS and PMOS increased by about 10%, the saturation current of NMOS decreases by about 20%, while the saturation current of PMOS increases by about 20%. It is also found that the lower temperature enhances the STI stress and then influences the device performance further. Then a macro model for this effect is proposed and is well verified.
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| 关 键 词： | 应力效应 STI MOSFET 深亚微米 阈值电压 PMOS NMOS 饱和电流 |
The STI stress effect on deep submicron PDSOI MOSFETs |
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| Bu Jianhui,Li Shuzhen,Luo Jiajun and Han Zhengsheng. The STI stress effect on deep submicron PDSOI MOSFETs[J]. Chinese Journal of Semiconductors, 2014, 35(3): 034008-3 |
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| Authors: | Bu Jianhui Li Shuzhen Luo Jiajun Han Zhengsheng |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | PDSOI STI stress temperature model |
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| Keywords: | PDSOI STI stress temperature model |
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