| GaAs MESFET欧姆接触可靠性研究进展 |
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| 引用本文： | 穆甫臣,李志国.GaAs MESFET欧姆接触可靠性研究进展[J].半导体技术,1998,23(5):6-12,28. |
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| 作者姓名： | 穆甫臣 李志国 |
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| 作者单位： | 北京工业大学电子工程系可靠性物理室 |
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| 摘 要： | 报道了ｎ型ＧａＡｓ上欧姆接触的制备及其可靠性，以及基于欧姆接触退经的ＧａＡｓＭＥＳＰＥＴ的失效分析，结果表明，ｎ型ＧａＡｓ上欧姆接触的制备已日趋成熟，接触电阻有所减小，表面形貌及热稳定性方面都得到了很大程度的提高，接触材料也日趋丰富ＧａＡｓＭＥＳＦＥＴ的失效分析方法也有明显改进。
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| 关 键 词： | MESFET 欧姆接触 可靠性 砷化镓 |
Study and Progress of GaAs MESFET Ohmic Contact |
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| Mu Fuchen,Li Zhiguo,Guo Weiling,Zhang Wanrong,Sun Yinghua,Cheng Yaohai,Yan Yongxin.Study and Progress of GaAs MESFET Ohmic Contact[J].Semiconductor Technology,1998,23(5):6-12,28. |
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| Authors: | Mu Fuchen Li Zhiguo Guo Weiling Zhang Wanrong Sun Yinghua Cheng Yaohai Yan Yongxin |
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| Abstract: | The fabrication and reliability of ohmic contact on n type GaAs and fai lure analysis of GaAs MESFET based on ohmic contact degradation are reported in this paper.The results show that the fabrication of ohmic contact on n type GaAs has deve loped a lot,contact resistance has decreased,surface morphology and thermal reliability have been improved very much,and contact materials have become richer.The method of GaAs MESFET failure analysis has been improved greatly. |
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| Keywords: | GaAs MESFET Ohmic contact Reliability |
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