Use of AgInTe2 for optoelectronic switching at higher frequencies

A possible application of AgInTe₂ for optoelectronic switching is reported. Alternating and direct current (a.c. and d.c.) response of the material has been studied over a wide frequency range (5 Hz to 1 MHz) through measurements of conductance, capacitance and photocurrent at different temperature and illumination levels. The switching/recovery time has been analysed in terms of time constant and found to be of the order of microseconds for this material. Higher frequencies of operation (>40 kHz) are preferable because, at such frequencies, becomes almost independent of illumination level and temperature. Furthermore, the switching speed can be conveniently controlled with d.c. bias applied across the sample. Elliott's CBH model has been satisfactorily used to explain the switching behaviour for AgInTe₂.