|
|||||
|
|
Ferroelectrically Gated Atomically Thin Transition‐Metal Dichalcogenides as Nonvolatile Memory |
|
| Authors: | Changhyun Ko Yeonbae Lee Yabin Chen Joonki Suh Aslihan Suslu James David Clarkson Hwan Sung Choe Sefaatin Tongay Ramamoorthy Ramesh Junqiao Wu |
| Affiliation: | 1. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, USA;2. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA;3. Department of Physics, University of California, Berkeley, Berkeley, CA, USA;4. Materials Sciences DivisionLawrence Berkeley National Laboratory, Berkeley, CA, USA |
| Abstract: | |
| Keywords: | 2D materials ferroelectrics field‐effect transistors nonvolatile memory transition‐metal dichalcogenides |