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Highly Mismatched,Dislocation‐Free SiGe/Si Heterostructures
Authors:Fabio Isa  Marco Salvalaglio  Yadira Arroyo Rojas Dasilva  Mojmír Meduňa  Michael Barget  Arik Jung  Thomas Kreiliger  Giovanni Isella  Rolf Erni  Fabio Pezzoli  Emiliano Bonera  Philippe Niedermann  Pierangelo Gröning  Francesco Montalenti  Hans von Känel
Affiliation:1. Laboratory for Solid State Physics, ETH Zürich, CH‐, Zürich, Switzerland;2. L‐NESS and Department of Materials Science, Università di Milano‐Bicocca, Milano, Italy;3. Electron Microscopy Center EMPA, Swiss Federal Laboratories for Materials, Science and Technology, CH, Dübendorf, Switzerland;4. Department of Condensed Matter Physics, Masaryk University, Brno, Czech Republic;5. CEITEC, Masaryk University, Brno, Czech Republic;6. L‐NESS and Department of Physics, Politecnico di Milano, Como, Italy;7. CSEM, CH, Neuchatel, Switzerland
Abstract:
Keywords:heteroepitaxy  heterostructures  strain relaxation  SiGe  substrate patterning
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