散粒噪声用于纳米电子器件与结构的量子效应表征

论述了纳米电子器件与结构中散粒噪声的产生机理和影响因素,表明散粒噪声与输运过程密切相关,按照噪声功率谱的幅值大小将散粒噪声分为泊松散粒噪声、亚泊松散粒噪声和超泊松散粒噪声四类。将散粒噪声的这些规律应用于纳米电子器件和结构,可表征不同器件与结构中的量子效应。利用散粒噪声已经成功检测到无序导线中的开放通道与量子点混沌腔中的波动性,测量出超导体与分数量子霍尔效应中的准粒子电荷。将散粒噪声用于检测纠缠态对量子计算具有重要的意义,自旋相干输运的检测是自旋电子学的重要研究课题。

Quantum Effects Characterizing in Nanoelectronic Devices and Structures by Means of Shot Noise

Origination and effect factors of the shot noise in nanoelectronic devices and structures are demonstrated,which shows that the shot noise is closely related with the transport.Moreover,in terms of the magnitude of noise power spectrum density,shot noises are classified into three categories:individually poissonian shot noise,sub-poissonian shot noise and super-poissonian shot noise.All of the rules can be applied to different nanoelectronic devices and structures,and the shot noise as a probe may character...