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CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction |
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| Authors: | Y. Chang C. H. Grein C. R. Becker X. J. Wang Q. Duan S. Ghosh P. Dreiske R. Bommena J. Zhao M. Carmody F. Aqariden S. Sivananthan |
| Affiliation: | 1. Microphysics Laboratory, Department of Physics (MC273), University of Illinois at Chicago, Chicago, IL, 60607, USA 2. Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL, 60607, USA 3. EPIR Technologies, Inc., Bolingbrook, IL, 60440, USA 5. Teledyne Scientific and Imaging, 1049 Camino Dos Rios, Thousand Oaks, CA, 91360, USA 4. Sivananthan Laboratories, Inc., Bolingbrook, IL, 60440, USA |
| Abstract: | CdZnTe-based heterojunction p?Ci?Cn or M?C???Cn detectors using HgTe/HgCdTe superlattice contacts are modeled and designed to reduce leakage currents under high electric fields and thereby improve x-ray and ??-ray detector performance. The employment of an n-type HgTe/HgCdTe superlattice as a contact layer can theoretically result in significantly less leakage current compared with a contact layer using either bulk semiconductor or metal contacts. The benefits arise from the ability to design HgTe/HgCdTe superlattices to have large carrier effective masses in the electric field direction, which results in low carrier velocities. Nevertheless the density of states is lower than that of a comparable bulk semiconductor, which results in low carrier concentrations. |
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