MOS器件静电潜在损伤的1／f噪声监测方法

通过对MOS器件的静电应力试验以及监测试验过程中电参数和1/f噪声的变化，发现1/f噪声对于由电静电应力引起的潜在损伤要比电参数的变化敏感得多，在同样的静电应力条件下，1/f噪声的相对变化量比跨导的相对退化量大6倍以上，分析表明，起源于边界陷阱的1/f噪声对于静电诱发的氧化层电荷和界面陷阱两类缺陷同时敏感，而电参数的变化主要取决于其中一类缺陷，因此，1/f噪声的测试可以作为一种经济、有效、完全非破坏性的工具，检测静电引起的MOS器件潜在损伤。

Application of 1/f noise in monitoring electrostatic latent damage in MOS devices

How to detect the latent damage caused by ESD is a reliability problem to be solved urgently for MOS device in VLSI. In this paper, the ESD stressing tests forn channel MOSFETs are performed, and their main electrical parameters and noise spectrum are monitored druing the test. It is found that the change in the 1/f noise is much more sensitive to the ESD latent damage than that in the electrical parameters. At the identical ESD stress, the percentage change in 1/f noise is a factor of 6 times or more than the percentage change in maximum transconductance. It is shown in mechanism analysis that 1/f noise originating from border traps is sensitive to both of the oxide charges and interface traps induced by ESD, while the changes of electrical parameters usually lie on one of the defects. So, 1/f noise measurements can offer an economical, effective and indestructive tool to detect the latent damage induced by ESD for MOS device.