离子注入GaAs MESFET''''s的有限元二维数值分析

本文用有限元方法对离子注入 GaAs MESFET’s的稳态特性进行了二维数值模拟和分析,并与均匀掺杂器件作了比较.程序中,对边界条件、网格剖分和初值选取方法进行了改进.所开发的程序可以对不同尺寸、不同掺杂分布的平面栅、凹形栅 GaAs MESFET’s进行二维数值分析,得到其内部电位、电场、载流子浓度等物理量的二维分布和器件的I-V特性.本文还讨论了凹形栅的几何形状对器件内部电场强度的影响.最后,对实际的离子注入凹形栅GaAsMESFET进行了模拟,计算结果与实验数据基本吻合.

Two Dimensional Numerical Analysis of Ion-Implanted GaAs MESFETs by the Finite-Element Method

This paper analyzed the steady-state characteristics of ion-implanted GaAs MESFET_3using finite-element method.Some improvements have been made on the boundary conditions,mesh generation and estimation of initial values ha the program.The electron concentrationand potential distribution inside the GaAs FETs and current-voltage characteristics were com-puted for recessed and planar gate devices.The results were analyzed and compared withuniform doping devices.Also,the effect of the geometric shape of the recessed gate on thefield distribution inside the device was studied.At last,the simulation of a actual ion-implant-ed GaAs MESFET with a recessed structure was made,and the computational results were ingood agreement with the experimental data.