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| 基于集成众核的3D蒙特卡罗半导体器件模拟器 | |
| 引用本文： | 方民权,张卫民,张理论,曾琅,刘晓彦,尹龙祥.基于集成众核的3D蒙特卡罗半导体器件模拟器[J].计算机工程与科学,2015,37(4):621-627. |
| 作者姓名： | 方民权 张卫民 张理论 曾琅 刘晓彦 尹龙祥 |
| 作者单位： | 1. 国防科学技术大学计算机学院,湖南长沙,410073 2. 国防科学技术大学计算机学院,湖南长沙410073;国家超级计算广州中心,广东广州510006 3. 北京航空航天大学电子信息工程学院,北京100091;北京航空航天大学自旋电子交叉研究中心,北京100091 4. 北京大学微纳电子学研究院,北京,100871 |
| 基金项目： | 国家自然科学基金资助项目(41375113,61272146) |
| 摘 要： | 3D蒙特卡罗器件模拟计算量大,计算量随网格与粒子数增加而急剧增加。通过分析3D蒙卡模拟加速热点和进一步可并行性,研究有效电势方法的集成众核并行方案;研究粒子自由飞行、统计模拟信息、计算表面粗糙散射等热点并行方案,最终实现基于CPU/MIC的三级并行3D蒙特卡罗器件模拟软件。实验结果显示,三级并行比单级并行获得更好的性能;当提高模拟精度时,相比单级并行,三级并行蒙特卡罗模拟加速比增加。 |
| 关 键 词： | 蒙特卡罗 半导体器件模拟 集成众核 有效电势方法 粒子自由飞行 |
| 收稿时间： | 2014-10-11 |
| 修稿时间： | 2014-12-17 |
A 3-Dimension Monte Carlo simulator for semiconductor devices based on many integrated core |
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| FANG Min-quan , ZHANG Wei-min , ZHANG Li-lun , ZENG Lang , LIU Xiao-yan , YIN Long-xiang.A 3-Dimension Monte Carlo simulator for semiconductor devices based on many integrated core[J].Computer Engineering & Science,2015,37(4):621-627. | |
| Authors: | FANG Min-quan ZHANG Wei-min ZHANG Li-lun ZENG Lang LIU Xiao-yan YIN Long-xiang |
| Affiliation: | (1.College of Computer,National University of Defense Technology,Changsha 410073;2.National Supercomputing Center in Guangzhou,Guangzhou 510006;3.School of Electric and Information Engineering,Beihang University,Beijing 100091;4.Spintronics Interdisciplinary Center,Beihang University,Beijing 100091;5.Institute of Microelectronics,Peking University,Beijing 100871,China) |
| Abstract: | 3D Monte Carlo simulation for semiconductor devices consumes long time. Especially when grids are growing and particles are increasing, the computing scale becomes very large. By analyzing the hotspots and the second level parallelism, the parallel scheme of the Effective Potential Method on Many Integrated Core is presented; Parallel schemes of particle free fighting, simulation information statistics and surface roughness scattering computation are researched. A 3-level parallel 3D Monte Carlo simulator for semiconductor devices is implemented and validated. Results show that the 3-level parallel program can get a better performance than the original single level parallel version. When the simulation accuracy is improved, the 3-level parallel program can get a greater speed-up ratio. |
| Keywords: | Monte Carlo device simulating for semiconductor many integrated core effective potential method particle free flight |
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