| 磁控溅射Ni-Mn-Ga薄膜的磁致应变 |
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| 引用本文： | 郭世海,张羊换,陈自新,李长生,王国清,王新林.磁控溅射Ni-Mn-Ga薄膜的磁致应变[J].功能材料与器件学报,2006,12(2):103-107. |
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| 作者姓名： | 郭世海 张羊换 陈自新 李长生 王国清 王新林 |
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| 作者单位： | 钢铁研究总院功能材料所,北京,100081;江苏大学机械工程学院,镇江,212013 |
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| 摘 要： | 采用直流磁控溅射的方法,在NaCl基底上沉积了Ni-Mn-Ga薄膜,对薄膜进行了形貌观察、微区成分及结构分析,并测量了薄膜的磁致应变.结果表明,薄膜表面可见大小不一的团簇颗粒,具有明显的岛状结构,表明Ni-Mn-Ga薄膜的形成为典型的核生长型机制.热处理前的薄膜具有部分非晶存在,热处理后薄膜晶化为多晶形态.无约束薄膜在磁场下呈现负的磁致应变,在1.3T磁场下,其最大应变值可达-0.008%,并且可以完全恢复.
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| 关 键 词： | Ni-Mn-Ga 形状记忆合金 薄膜 磁致应变 |
| 文章编号： | 1007-4252（2006）02-0103-05 |
| 收稿时间： | 2005-06-16 |
| 修稿时间： | 2005-09-27 |
Magnetic-field-induced strain of Ni-Mn-Ga thin films prepared by magnetron sputtering |
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| GUO Shi-hai,ZHANG Yang-huan,CHEN Zi-xin,LI Chang-sheng,WANG Guo-qing,WANG Xin-lin.Magnetic-field-induced strain of Ni-Mn-Ga thin films prepared by magnetron sputtering[J].Journal of Functional Materials and Devices,2006,12(2):103-107. |
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| Authors: | GUO Shi-hai ZHANG Yang-huan CHEN Zi-xin LI Chang-sheng WANG Guo-qing WANG Xin-lin |
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| Affiliation: | 1. Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081, China; 2. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China |
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| Abstract: | Ni- Mn -Ga thin films were deposited by dc magnetron sputtering on NaCI substrates. The surface morphology, compositions and microstructures of the films were investigated and the magnetic - field -induced strain was measured. The results show that the films deposited on NaCl substrates have a surface with granules cluster of various sizes. A clear island structure of the films is observed, which indicates the films are formed by typical nuclear- growing mechanism. There is a partial amorphous state in the films before heat treatment. The heat treatment leads to polycrystalline state in the films. The freestanding thin films exhibit a recoverable shrink magnetic - field - induced strain of about - 0. 008% at the magnetic field of 1.3T. |
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| Keywords: | Ni - Mn - Ga shape memory alloy thin film magnetic - field - induced strain |
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