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Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation
Authors:Oriols  X
Affiliation:Dept. d'Enginyeria Electron., Univ. Autonoma de Barcelona, Spain;
Abstract:A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach.
Keywords:
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