Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation |
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Authors: | Oriols X |
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Affiliation: | Dept. d'Enginyeria Electron., Univ. Autonoma de Barcelona, Spain; |
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Abstract: | A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach. |
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