| La3＋-doped SrBi2Ta209 thin films for FRAM synthesized by sol-gel method |
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| 作者单位： | [1]F. Skorina Gomel State University, Sovetskaya st. 104, Gomel, 246019, Belarus [2]JSC 《INTEGRAL》, 121A, Kazintsa st., Mirnsk, 220108, Belarus [3]Insti- tute o fLow Temperature and Structures Research PAN, Okolna st.2, Wroelaw, Poland |
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| 摘 要： | This paper discusses the possibility of synthesis of SBTL sol-gel films for use as active layers for non-volatile memory （FRAM）. La-doped SrBi2Ta209 thin films were synthesized by sol-gel method on Pt/TiO2/BPSG/SiO2/Si substrates. The structural features of the surface （AFM）, crystallization behavior （XRD） during the heating and ferroelectric properties of synthesized films were discussed. It was shown that an optimum surface structure and a high share of perovskite phase of SBTL-films were compared to SBT-films （Theating=800 ℃）. Achieved ferroelectric parameters suggested the possibility of using synthesized SBTL sol-gel films in non-volatile memory devices.
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| 关 键 词： | FRAM 合成膜 凝胶法 溶胶 薄膜 非易失性存储器 镧掺杂 表面结构 |
| 收稿时间： | 6 June 2013 |
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