On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition |
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Authors: | E. Quiroga-Gonzá lezW. Bensch,M. Aceves-Mijares,Z. YuR. Ló pez-Estopier,K. Monfil-Leyva |
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Affiliation: | a Institute for Materials Science of the University of Kiel, Kaiserstr. 2. D-24143 Kiel, Germanyb Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2. D-24118 Kiel, Germanyc National Institute for Astrophysics, Optics and Electronics, Luis Enrique Erro 1, 72840 Tonantzintla, Mexicod Solar Energy Division, Tianjin Lishen Battery Joint-Stock Co Ltd. 300384 Tianjin, Chinae Instituto Tecnológico Superior de Poza Rica, Luis D. Colosio S/N, 93230 Poza Rica, Mexicof Centro de Investigación en Energía-UNAM, Privada Xochicalco S/N, 62580 Temixco, Mexico |
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Abstract: | The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed. |
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Keywords: | Multilayers Silicon rich oxide Nanoparticles Photoluminescence Low-pressure chemical vapor deposition Transmission electron microscopy |
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