Low-noise silicon carbide X-ray sensor with wide operating temperature range |
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| Authors: | Bertuccio G Casiraghi R Cetronio A Lanzieri C Nava F |
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| Affiliation: | Dept. of Electron. Eng. & Inf. Sci., Politecnico di Milano, Italy; |
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| Abstract: | A silicon carbide (SiC) sensor is presented with high energy resolution in X-ray spectroscopy over a wide temperature range (27-100/spl deg/C). The sensor, consisting of a Schottky barrier diode on high resistivity epitaxial SiC, is characterised by an extremely low noise due to its ultra-low reverse current density even at high operating temperature (15 pA/cm/sup 2/ at 27/spl deg/C and 0.5 nA/cm/sup 2/ at 100/spl deg/C). Equivalent noise charges as low as 17 electrons rms at 27/spl deg/C and 47 electrons rms at 100/spl deg/C have been measured, allowing X-ray spectroscopy with an energy resolution as low as 315 eV and 797 eV FWHM, respectively. |
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