Analyses of delta-doped emitter bipolar transistor |
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| Authors: | K. F. Yarn K. L. Lew Y. H. Wang M. P. Houng |
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| Affiliation: | 1. Department of Electronic Engineering , Far East College , Hsin-Shih, Tainan 744, Taiwan, Republic of China;2. Institute of Microelectronics , Department of Electrical Engineering, National Cheng Kung University , Tainan 701, Taiwan, Republic of China |
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| Abstract: | In this article, the theoretical model of delta-doped emitter bipolar transistor that included the effect of bandgap shrinkage is presented. The recombination in emitter set-back layer is also considered. We also present the calculated results for the current gain as a function of barrier height, barrier width, and emitter set-back layer thickness. The experimental results of the device are also given. |
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| Keywords: | Delta-doped Set-back layer Thermionic-emission Tunneling WKB approximation |
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