Conduction in Bi2O3-based oxide ion conductor under low oxygen pressure. II. Determination of the partial electronic conductivity

In order to investigate the partial electronic conduction in the high oxide ion conductor of the system Bi₂O₃-Y₂O₃ under low oxygen pressure, e.m.f. and polarization methods were employed. Although the electrolyte was decomposed when the (P_{{text{O}}_{text{2}} }) was lower than the equilibrium (P_{{text{O}}_{text{2}} }) of Bi, Bi₂O₃ mixture at each temperature, the ionic transport number was found to be close to unity above that (P_{{text{O}}_{text{2}} }) . The hole conductivity (σ _p) and the electron conductivity (σ _p) could be expressed as follows, $$begin{gathered} sigma _p Omega cm = 5 cdot 0 times 10^2 left( {P_{O_2 } atm^{ - 1} } right)^{{1 mathord{left/ {vphantom {1 4}} right. kern-nulldelimiterspace} 4}} exp left[ { - 106 kJleft( {RT mol} right)^{ - 1} } right] hfill sigma _p Omega cm = 3 cdot 4 times 10^5 left( {P_{O_2 } atm^{ - 1} } right)^{ - {1 mathord{left/ {vphantom {1 4}} right. kern-nulldelimiterspace} 4}} exp left[ { - 213 kJleft( {RT mol} right)^{ - 1} } right] hfill end{gathered} $$ These values were much lower than the oxide ion conductivity under ordinary oxygen pressure.