Spatial distribution of hot electrons as a physical limit to MOS transistor performance |
| |
Authors: | Schmitt-Landsiedel S. Dorda G. |
| |
Affiliation: | Siemens AG, Research Laboratories, München, West Germany; |
| |
Abstract: | The spatial distribution of the free carriers in the channel of a MOS transistor is changed in the hot-electron regime. There the electron distance from the oxide is enlarged, causing a reduction of gate capacitance and transistor current. This is a physical limit to the performance of MOSFETs with short channels and thin gate oxides. |
| |
Keywords: | |
|
|