The effect of He or Ar/O2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2

The effect of O₂ plasma pretreatment on the SiO₂/Si interface property was studied using direct plasma varying the plasma power, He or Ar/O₂ ratio and the pretreatment time. The decrease of the pretreatment plasma power decreased the plasma damage and improved the interface property. The addition of He in O₂ glow discharge improved the electrical and the interface properties and there was an optimum He/O₂ ratio. The improvement of the interface property by Ar/O₂-plasma pretreatment was better than that by He/O₂, which is believed to be due to the lower oxidation rate of the Si surface. C–V analysis showed that the P_b center defect density was influenced by plasma pretreatment process parameters. To investigate the oxidation states near to and at the SiO₂/Si interface, X-ray photoelectron spectroscopy depth analysis was used and the gas phase in the glow discharge was investigated using optical emission spectroscopy analysis at various experimental conditions.