Radiation damage in silicon detectors |
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Affiliation: | 1. Aragón Institute of Engineering Research, Universidad de Zaragoza, Spain;2. Centro Universitario de la Defensa, Zaragoza, Spain;3. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, Italy |
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Abstract: | A review is presented of the effects of radiation damage on silicon detectors, which are being considered for high energy physics applications. The main degradation in performance is an increase in leakage current, which can be well characterized by an empirical damage constant for many radiations. A summary of data on damage constants is given. A brief discussion of annealing effects in terms of band gap level changes is included. |
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