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Control of oxidation on NiSix during etching and ashing processes |
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| Authors: | S. Sakamori K. Yonekura T. Kosaka K. Tateiwa |
| Affiliation: | a Process Development Department, Process Technology Development Div., Renesas Technology Corp., 4-1, Mizuhara, Itami-shi, Hyogo 664-0005, Japan b ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 19, Nishikujo-kasuga-cho, Minami-ku, Kyoto 601-8413, Japan |
| Abstract: | The oxidation on nickel silicide (NiSix) during plasma etching and oxygen ashing is investigated for stable contact resistance on NiSix. NiSix exposed by various processes is observed by X-ray photoelectron spectroscopy. The oxidation on NiSix is promoted by the fluorine that remains during etching and the oxide thickness on n+ NiSix is greater than that on p+ NiSix. The remaining fluorine after etching can be decreased by in-situ nitrogen plasma treatment during the post-etching process. Therefore, the oxidation progress with exposure to air and the difference in oxidation on NiSix between n+ and p+ can be suppressed. |
| Keywords: | Etching X-ray photoelectron spectroscopy Nickel Oxidation |
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