|
|||||
|
|
Novel organosiloxane vapor annealing process for improving properties of porous low-k films |
|
| Authors: | K. Kohmura H. Tanaka M. Murakami S. Takada Y. Seino |
| Affiliation: | a MIRAI, Association of Super-Advanced Electronics Technologies (ASET), IBARAKI 305-8569, Japan b Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, IBARAKI 305-8569, Japan c MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, IBARAKI 305-8569, Japan d Research Center for Nanodevices and Systems, Hiroshima University, HIROSHIMA 739-8527, Japan |
| Abstract: | A novel 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS)-vapor annealing method was developed for improving the mechanical strength of porous silica films with a low dielectric constant. TMCTS molecules react with Si-OH groups on the pore wall surfaces to form the polymer network which results in the high hydrophobicity and reinforcement of the silica wall. This method can be used to recover plasma damages induced by etching and ashing in fabricating Cu/low-k interconnects. |
| Keywords: | Porous silica film Dielectric properties Mechanical properties Silylation |
| 本文献已被 ScienceDirect 等数据库收录！ | |