|
|||||
|
|
Ni-silicide precursor for gate electrodes |
|
| Authors: | M Ishikawa I Muramoto S Imai Y Ohshita |
| Affiliation: | a Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-shi, Yamanashi 409-0112, Japan b Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki-shi, Kanagawa 214-8571, Japan c Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya-shi, Aichi, 468-8511, Japan |
| Abstract: | Ni-silicide film was deposited at a low temperature of 160 °C by CVD using a Ni(PF3)4/Si3H8 gas system. Injecting Si3H8 during the Ni deposition does not affect the deposition rate, but the step-coverage quality deteriorates at high growth temperatures. At high growth temperatures, the Ni/Si ratio of the film deposited on the sidewall varies as the distance from the open area increases. High step-coverage quality and a constant Ni/Si ratio independent of the location of the deposition are strongly required to fabricate a three-dimensional device. These requirements were achieved with this CVD by depositing the Ni-silicide film below 180 °C. |
| Keywords: | Ni-silicide CVD Ni(PF3)4 Si3H8 |
| 本文献已被 ScienceDirect 等数据库收录！ | |