Effect of doping elements on ZnO etching characteristics with CH4/H2/Ar plasma |
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Authors: | M.H. Shin S.H. Jung N.-E. Lee |
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Affiliation: | a School of Advanced Materials Science and Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea b Department of Chemistry, Institute of Basic science, and Center for Advanced Plasma Surface Technology Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea |
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Abstract: | Effect of doping elements on the etching characteristics of doped-ZnO (Ag, Li, and Al) thin films, etched with a positive photoresist (PR) mask, and an etch process window for infinite etch selectivity were investigated by varying the CH4 flow ratio and self-bias voltage, Vdc, in inductively coupled CH4/H2/Ar plasmas. Increased doping of ZnO films decreased the etch rates significantly presumably due to lower volatility of reaction by-products of doped Li, Ag, and Al in CH4/H2/Ar plasmas. The etch rate of AZO (Al-doped ZnO) was most significantly decreased as the doping concentration is increased from 4 to 10 wt%. It was found that process window for infinite etch selectivity of the doped ZnO to the PR is closely related to a balance between deposition and removal processes of a-C:H (amorphous hydrogenated carbon) layer on the doped-ZnO surface. Measurements of optical emission of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, implied that the chemical reaction of CH radicals with Zn atoms in doped-ZnO play an important role in determining the doped-ZnO etch rate together with an ion-enhanced removal mechanism of a-C:H layer as well as Zn(CHx)y etch by-products. |
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Keywords: | Doped-ZnO Plasma etching Inductively coupled plasma XPS OES |
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