Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode |
| |
| Authors: | Feng WEN Lirong HUANG Liangzhu TONG Dexiu HUANG Deming LIU |
| |
| Affiliation: | Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074,China |
| |
| Abstract: | Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strain-reduction layer, green InGaN/GaN MQW and blue InGaN/ GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electrolumines-cence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence. |
| |
| Keywords: | multi-quantum well (MQW) luminescence dual-wavelength metal-organic chemical vapor deposition (MOCVD) |
| 本文献已被 万方数据 等数据库收录！ |
|
