Influence of thermal annealing on photoluminescence and structural properties of N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) organic thin films |
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Authors: | K.A. Osipov E.V. Lutsenko G.P. Yablonskii A. Janssen R. Caspary N. Meyer M. Heuken C. Zimmermann H. Kalisch R.H. Jansen |
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Affiliation: | a Institute of Physics of National Academy of Sciences, Independence Ave 68, 220072 Minsk, Belarus b Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraβe 22, 38106 Braunschweig, Germany c AIXTRON AG, Kackertstraße 15-17, 52072 Aachen, Germany d Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstraβe 16, 52074 Aachen, Germany |
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Abstract: | Photoluminescence (PL) spectra and intensities of thin N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) films have been measured at room temperature, during sample heating with various rates and annealing times at constant temperatures, and after annealing. It was found that the temperature of T = 80 °C being considerably lower than the glass transition temperature of α-NPD is sufficient to cause substantial irreversible changes in PL and PL excitation characteristics. A PL efficiency increase up to 10 times, an emission spectrum short-wavelength shift up to 130 meV and a spectral narrowing from 69 to 39 nm are reached using annealing. The surface roughness of the films annealed at the moderate temperature of 80 °C does not undergo observable changes contrary to films annealed at higher temperatures. |
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Keywords: | Organic semiconductors OLED NPD NPB Annealing Photoluminescence Surface morphology |
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