首页 | 本学科首页   官方微博 | 高级检索  
     


Influence of thermal annealing on photoluminescence and structural properties of N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) organic thin films
Authors:K.A. Osipov  E.V. Lutsenko  G.P. Yablonskii  A. Janssen  R. Caspary  N. Meyer  M. Heuken  C. Zimmermann  H. Kalisch  R.H. Jansen
Affiliation:a Institute of Physics of National Academy of Sciences, Independence Ave 68, 220072 Minsk, Belarus
b Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraβe 22, 38106 Braunschweig, Germany
c AIXTRON AG, Kackertstraße 15-17, 52072 Aachen, Germany
d Institut für Theoretische Elektrotechnik, RWTH Aachen, Kopernikusstraβe 16, 52074 Aachen, Germany
Abstract:Photoluminescence (PL) spectra and intensities of thin N,N′-diphenyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) films have been measured at room temperature, during sample heating with various rates and annealing times at constant temperatures, and after annealing. It was found that the temperature of T = 80 °C being considerably lower than the glass transition temperature of α-NPD is sufficient to cause substantial irreversible changes in PL and PL excitation characteristics. A PL efficiency increase up to 10 times, an emission spectrum short-wavelength shift up to 130 meV and a spectral narrowing from 69 to 39 nm are reached using annealing. The surface roughness of the films annealed at the moderate temperature of 80 °C does not undergo observable changes contrary to films annealed at higher temperatures.
Keywords:Organic semiconductors   OLED   NPD   NPB   Annealing   Photoluminescence   Surface morphology
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号