HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors |
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Authors: | S-W Jeong KS Kim Y Roh T Noguchi J Jung |
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Affiliation: | a School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea b Samsung Advanced Institute of Technology, Suwon 449-712, Republic of Korea |
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Abstract: | We have investigated the effects of annealing temperature on the physical and electrical properties of the HfO2 film deposited by an atomic layer deposition (ALD) method for high-k gate oxides in thin-film-transistors (TFTs). The ALD deposition of HfO2 directly on the Si substrate at 300 °C results in the formation of thin HfSixOy interfacial layer between Si and HfO2. The subsequent low temperature N2-annealing of HfO2 films (i.e., 300 °C) using a rapid thermal processor (RTP) improves the overall electrical characteristics of HfSixOy-HfO2 films. Based on the current work, we suggest that HfO2 film deposited by the ALD method is suitable for high-k gate oxides in TFTs, which have to be fabricated at low temperature. |
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Keywords: | 81 05 -t |
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