Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition |
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Authors: | P. Alpuim M. Andrade V. Sencadas M. Ribeiro S.A. Filonovich S. Lanceros-Mendez |
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Affiliation: | Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães, Portugal |
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Abstract: | The piezoresistive property of n-type and p-type nanocrystalline silicon thin films deposited on plastic (PEN) at a substrate temperature of 150 °C by hot-wire chemical vapor deposition, is studied. The crystalline fraction decreased from 80% to 65% in p-type and from 84% to 62% in n-type films, as the dopant gas-to-silane flow rate ratio was increased from 0.18% to 3-3.5%. N-type films have negative gauge factor (− 11 to − 16) and p-type films have positive gauge factor (9 to 25). In n-type films the higher gauge factors (in absolute value) were obtained by increasing the doping level whereas in p-type films higher gauge factors were obtained by increasing the crystalline fraction. |
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Keywords: | Nanocrystalline silicon Piezoresistivity Hot-wire chemical vapor deposition Flexible electronics |
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