Fullerene thin-film transistors fabricated on polymeric gate dielectric

Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10^− 2 cm² V^− 1 s^− 1 were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions.