Epitaxial growth and relaxation of γ-Al2O3 on silicon |
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Authors: | C. Merckling M. El-Kazzi M. Gendry G. Grenet |
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Affiliation: | a LEOM — Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully, France b ST Microelectronics, 850 avenue Jean Monnet, 38926 Crolles, France c DRFMC, 17 rue des Martyrs, 38054 Grenoble, France d Université Joseph Fourier, BP 53, 38041, Grenoble Cedex 9, France |
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Abstract: | 0.5-10 nm-thick single crystal γ-Al2O3 films was epitaxially grown, at high temperature, on Si(001) and Si(111) substrates using electron-beam evaporation techniques. Reflection High Energy Electron Diffraction studies showed that the Al2O3 films grow pseudomorphically on Si (100) up to thickness of 2 nm. For higher thicknesses, a cubic to hexagonal surface phase transition occurs. Epitaxial growth and relaxation were also observed for Si(111). The film surfaces are smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers. |
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Keywords: | Epitaxial oxides γ-Al2O3, Al2O3/Si Strain relaxation RHEED |
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