Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary |
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Authors: | IH Song |
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Affiliation: | School of Electrical Engineering and Computer Science (#50), Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, South Korea |
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Abstract: | This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. |
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Keywords: | Perpendicular grain boundary Hot carrier stress High current stress Poly-Si TFT |
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