Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric |
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| Authors: | Jae Bon Koo Jung Wook Lim Sun Jin Yun Sang Chul Lim |
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| Affiliation: | a Electronics and Telecommunications Research Institute, IT Convergence and Components Laboratory, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, South Korea
b Information Display Department, Kyung Hee University, Hoegi-dong, Dongdaemun-gu, Seoul 130-701, South Korea |
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| Abstract: | The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al2O3 dielectric are reported. Saturation mobility of 0.38 cm2/V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 108 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al2O3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to − 5 V at supply voltage of − 5 V. |
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| Keywords: | Pentacene Organic transistor Inverter Threshold voltage Al2O3 HMDS |
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