Argon ion beam and electron beam-induced damage in Cu(In,Ga)Se2 thin films

Ar ion beam and electron beam-induced damages in Cu(In,Ga)Se₂ thin films are investigated by transmission electron microscopy and X-ray energy-dispersive spectroscopy. We find that a high-energy Ar ion beam can cause severe damage in Cu(In,Ga)Se₂ surface regions by preferentially depleting Se and In. The depletion can occur with an Ar ion beam at energy as low as 0.5 keV. High-energy electron beams also cause damage in Cu(In,Ga)Se₂ thin films by preferentially depleting In and Ga. Our results imply that special care must be taken for measurements involving surface treatments using high-energy Ar ion beams or electron beams.