A stable indium-phosphide diffused junction field-effect transistorwith high gain and low leakage

The fabrication and performance of a JFET which is made by diffusing zinc into an epitaxial channel of indium phosphide grown by MOCVD on a semi-insulating InP(Fe) substrate are presented. The total gate length is 2.4 μm. At 0-V gate bias the transconductance is 140 mS/mm, the gate-source capacitance is 3.0 pF/mm, and the output conductance is less than 0.5 mS/mm. At -2-V gate bias the leakage from gate to source is 4 nA/mm. The drift in drain-source current is less than ±1% after 10⁶ s under continual DC bias