DL—78型单晶炉的热场和减压工艺

本文论述了硅单晶生长炉从1公斤级增长到15公斤级时，其热场设计的基本方法及大容量、长时间拉晶过程中采用的减压工艺。指出在随器件要求而增加硅片直径时，硅单晶锭的直径和长度应成比例增加，即硅单晶长度：直径应大于10:1，而在晶体生长中，坩埚直径。晶体直径应大于2．5：1。在大容量、长时间的晶体生长条件下，保持2．7×103Pa左右的炉压、一定的氩气流量和合理的氩气导流结构是避克拉晶过程中SiO在空间凝聚或在炉内物件表面沉积的必要条件．

THERMAL FIELD AND DECOMPRESSION TECHNOLOGY OF DL-78 MONOCRYSTAL FURNACE

The fundamental method of thermal field design of sillcon mono-crystal growing furnace of 15 kg-rank instead of 1kg-rank, and the decompression technology adopted in the crystal pulling process of large capacity and long period of time are related in this paper. It is indicated that as the diameter of silicon wafer is increased in accordance with the requirement of devices,the diameter of silicon monocrystal ingot should be increased in .proportion with the length of ingot, I. e. length/diameter should be greater than 10/1 and in the period of crystal.growth, diameter of crucible/diameter of crystal should be greater than 2.5/1. In the crystal pulling process of large capacity and long period of time, for avoiding condensation of SiO2 in space and it, deposition on the surfaces of articles in the furnace, it is necessary to maintain a furnace pressure of 2.7 x 103Pa,and adequate flow of Ar2 and to have a reasonable flow guiding construction.