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MIM gate FET: new GaAs enhancement-mode transistor |
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| Authors: | Kohn E. Dortu J.M. |
| Affiliation: | Thomson-CSF, Orsay, France; |
| Abstract: | A new type of GaAs FET, the metal-insulator-metal gate FET, is proposed, which combines the advantages of both the GaAs MESFET and the GaAs MISFET. The device is especially suitable for the enhancement mode of operation. |
| Keywords: | |