InAs-InAlGaAs quantum dot DFB lasers based on InP [001] |
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| Authors: | Jin Soo Kim Jin Hong Lee Sung Ui Hong Ho-Sang Kwack Byung Seok Choi Dae Kon Oh |
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| Affiliation: | IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea; |
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| Abstract: | The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP 001]. The single-mode operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1.564 /spl mu/m at room temperature. This is the first observation on the InP-based QD lasers operating around the emission wavelength window of 1.55 /spl mu/m. The threshold current density of the InAs-InAlGaAs QD DFB laser with a cavity length of 1 mm and a ridge width of 3 /spl mu/m, in which one of the cleaved facets was coated with 95% high-reflection, was 1.23 kA/cm/sup 2/ (176 A/cm/sup 2/ for single QD layer). The sidemode suppression ratio value of the QD DFB laser was as high as 42 dB at the driving current of 100 mA. |
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