Si3N4/SiO2复合栅介质电离辐照的电子能谱分析

采用氩离子刻蚀X光激发电子能谱分析方法对Si3N4/SiO2/Si复合栅介质系统进行电离辐照剖析．实验结果表明存在一个由Si3N4和SiO2构成的界面区及由SiO2和Si构成的界面区，电离辐照能将SiO2/Si界面区中心向Si3N4/SiO2界面方向推移，同时SiO2/Si界面区亦被电离辐照展宽；电离辐照相当程度地减少位于SiO2/Si界面至Si衬底之间Si过渡态的浓度．在同样偏置电场中辐照，随着辐照剂量的增加SiO2/Si界面区中Si过渡态键的断开量也增加，同时辐照中所施偏置电场对SiO2/Si界面区Si过渡态键断开有显著作用．并对实验现象进行了机制分析．

Analysis of X-ray photoelectron spectroscopy on Si3N4/SiO2 double-gate medium under irradiation

A depth profiles analysis of the irradiation effect of Si₃N₄/SiO₂ double-gate medium under ⁶⁰Co-γ ray irradiation has been carried out by using the X-ray photoemission spectroscopy(XPS) method, with Ar⁺ ion etching. The experimental results show that there is distinct interface region between Si₃N₄ and SiO₂ as well as between SiO₂ and Si, respectively, and after irradiation, a shift to Si₃N₄/SiO₂ interface of the center SiO₂/Si interface region occurs. In addition, the SiO₂/Si interface region is broadened. A great decrease in concentration of Si middle state located in a region from SiO₂/Si interface to Si substrate is induced by irradiation. With the same bias, the amount of break-bond of Si middle states located in SiO₂/Si inteface region increases with increasing radiation doses, and it is found that the bias on the sample radiated plays an obvious role in breaking the bonds of Si middle states. Finally a discussion on experimental results is presented.