| 一种新的AlGaN/GaN HEMT半经验直流特性模型 |
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| 引用本文： | 刘丹,陈晓娟,刘果果,和致经,刘新宇,吴德馨. 一种新的AlGaN/GaN HEMT半经验直流特性模型[J]. 半导体学报, 2006, 27(11): 1984-1988 |
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| 作者姓名： | 刘丹 陈晓娟 刘果果 和致经 刘新宇 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 在EEHEMT1模型的基础上给出一种新的A1GaN/GaN HEMT半经验直流特性模型,考虑了栅源电压对膝点电压的影响,得到描述AlGaN/GaN HEMT器件I-Ⅴ特性的方程.此模型可以应用于蓝宝石和SiC两种不同衬底AlGaN/GaN HEMT器件的I-Ⅴ特性模拟.仿真结果和实验测量结果拟合误差小于3%.
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| 关 键 词： | AlGaN/GaN HEMT 模型 膝点电压 衬底 |
| 文章编号： | 0253-4177(2006)11-1984-05 |
| 修稿时间： | 2006-04-18 |
A New AlGaN/GaN HEMT Semiempirical DC Model |
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| Liu Dan,Chen Xiaojuan,Liu Guoguo,He Zhijing,Liu Xinyu and Wu Dexin. A New AlGaN/GaN HEMT Semiempirical DC Model[J]. Chinese Journal of Semiconductors, 2006, 27(11): 1984-1988 |
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| Authors: | Liu Dan Chen Xiaojuan Liu Guoguo He Zhijing Liu Xinyu Wu Dexin |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China |
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| Abstract: | A new AlGaN/GaN HEMT semiempirical DC model is given.This is the first model that takes into account the effect of the gate source voltages Vgs on the knee voltage.Functions describing the DC characteristic of the AlGaN/GaN HEMT are obtained.The model can be used to model the DC characteristic of AlGaN/GaN HEMTs based on sapphire as well as SiC.The error between results simulated by the model and the measured results is less than 3%. |
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| Keywords: | AlGaN/GaN HEMT model knee voltage substrate |
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