Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE

The growth of InMnAs quantum dots by low pressure MOVPE technique on patterned (1 0 0) GaAs substrates was studied. The patterning in the form of ridges with sidewalls having (2 1 1) and (3 1 1) facets was prepared by wet chemical etching via a GaAs/AlAs sacrificial etching mask structure. AFM studies showed that the dots formation and distribution were very similar for both types of facets under study. InMnAs dot density on the (3 1 1) plane is about 5–7 times lower in comparison to that on the (1 0 0) planar substrate. The dots on sidewalls are larger in comparison to average dots formatted on planar GaAs (1 0 0) substrate. The lateral dimensions of these dots are in the interval 100–180 nm. In addition, dot distribution along the sidewall (from top to bottom) is not uniform. A higher dot concentration was observed close to the intersection of (3 1 1) facets with concave bottom part of the valleys between ridges. Finally, no dots were grown on the (1 0 0) plane created by self-faceting on the top of the triangular ridges. This is probably a consequence of the high quality of the (1 0 0) facet formed by lateral overgrowth.