Thermal desorption of Ge native oxides and loss of Ge from the surface |
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Authors: | Jungwoo Oh Joe C Campbell |
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Affiliation: | 1. SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, USA;2. University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA |
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Abstract: | The authors have identified oxidation and desorption processes of Ge native oxide by chemical bonding states measured by X-ray photoemission spectroscopy. Ge oxidation occurs at the temperatures of 450–500 °C in an oxidizing ambient. Ge desorption in nitrogen ambient is observed at the temperatures of 500–550 °C, which is higher than the oxidation temperature by 50 °C. Combined oxidation and desorption processes proceed subsequently and cause a loss of Ge from the surface when Ge is annealed in oxidizing ambient at a temperature higher than desorption temperature. The surface loss is avoided when Ge is annealed with SiO2 cap layer in an identical annealing condition. |
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