首页 | 本学科首页   官方微博 | 高级检索  
     


Coexistence of anion and cation vacancy defects in vacuum-annealed In2O3 thin films
Authors:C. Sudakar  A. Dixit  Sanjiv Kumar  M.B. Sahana  G. Lawes  R. Naik  V.M. Naik
Affiliation:1. Department of Physics and Astronomy, Wayne State University, Detroit, MI 48201, USA;2. NCCCM, Bhabha Atomic Research Centre, ECIL Post, Hyderabad 500062, India;3. Department of Natural Sciences, University of Michigan-Dearborn, Dearborn, MI 48128, USA;1. Physic Laboratory of Thin Films and Applications LPCMA, University of Biskra, Algeria;2. Laboratoire de Couches Minces et Interfaces Faculté des Sciences Université de Constantine, Algeria;1. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany;2. Energy Materials In-situ Laboratory Berlin (EMIL), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin, Germany;3. Brandenburgische Technische Universität Cottbus-Senftenberg, Institut für Physik und Chemie, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;1. Department of Physics and Astronomy, King Saud University, Riyadh 11451, Saudi Arabia;2. Physics Department, Faculty of Science, Sohag University, 82524 Sohag, Egypt;1. State University of Moldova, str. Mateevich 60A, MD-2009 Chisinau, Republic of Moldova;2. Gwangju Institute of Science and Technology, Gwangju, Republic of Korea;3. National Institute for Material Science, Namiki, Tsukuba, Ibaraki, Japan
Abstract:
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号