| 溅射二氧化铈氧敏薄膜的XPS研究 |
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| 引用本文： | 杜新华,刘振祥.溅射二氧化铈氧敏薄膜的XPS研究[J].功能材料,1998,29(6):585-587. |
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| 作者姓名： | 杜新华 刘振祥 |
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| 作者单位： | [1]北京科技大学材料物理系 [2]中国科学院物理研究所表面物理国家重点实验室 |
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| 基金项目： | 福特－中国发展研究基金 |
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| 摘 要： | 本文用射频磁控溅射法制备了ＣｅＯ２－ｘ高温氧敏薄膜，利用Ｘ射线光电子能谱研究了不同处理条件对ＣｅＯ２－ｘ薄膜电子组态的影响，特别是对表面的价态和吸附性质的影响。通过对Ｃｅ３ｄＸＰＳ谱的高斯拟合，计算了Ｃｅ＾３＋浓度并给出了判定Ｃｅ＾４＋还原的标志。研究结果表明，在空气中经１１７３Ｋ高温退火后可得到结晶完好的多晶ＣｅＯ２薄膜，而薄膜的化学价态没有变化，退火前后薄膜表面总有少量Ｃｅ＾３＋存在（１５％）
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| 关 键 词： | 二氧化铈 薄膜 退火 XPS |
XPS Studies of New Oxygen Sensing Thin Films Made by Sputtered Cerium Dioxide |
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| Du Xinhua, Liu Zhenxiang, Xie Kan , Wang Yanbin , Chu Wuyang.XPS Studies of New Oxygen Sensing Thin Films Made by Sputtered Cerium Dioxide[J].Journal of Functional Materials,1998,29(6):585-587. |
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| Authors: | Du Xinhua Liu Zhenxiang Xie Kan Wang Yanbin Chu Wuyang |
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| Abstract: | The CeO2-x films were deposited from a sintered CeO2-x. ceramic target by reactive high frequencysputtering magnetron system. X-ray photoelectron spectroscopy of Ce3d core level was fit by Gaussion lineshapes forcalculating the different conentration of Ce3+ in the films. Influence of annealing processes and different treating conditions on the composition and structure, especially on the valence of cation and adsorption of CeO2-x films were determined by XPS. The results showed that there were always a small amount of Ce3+ in the films and their concentrationdid not changed before and after annealing process. Partially reduction films after annealing in air were most favorableto adsorption and reoxidation. The heavier extent of reduction was, the more powerful reoxidation was. |
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| Keywords: | ceria thin film annealing XPS adsorption redox |
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