| 计算机硬盘NiP基板CMP机理及技术研究 |
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| 引用本文： | 田军,刘玉岭,檀柏梅,牛新环,唐文栋.计算机硬盘NiP基板CMP机理及技术研究[J].微细加工技术,2008(3). |
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| 作者姓名： | 田军 刘玉岭 檀柏梅 牛新环 唐文栋 |
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| 作者单位： | 河北工业大学,微电子技术与材料研究所,天津,300130 |
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| 基金项目： | 教育部高等学校博士学科点专项科研基金，国家自然科学安全联合基金 |
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| 摘 要： | 目前,大多数计算机硬盘采用镍磷敷镀的铝合金作为磁盘盘片,并采用化学机械抛光(CMP)技术作为盘片最终的精抛光.通过对镍磷基板的化学性质分析,讨论了其CMP机理,指出在整个反应过程中,化学反应速率是慢过程,它决定了最终的CMP速率,如何使络合反应迅速向右进行将成为CMP的关键.通过分析浆料在硬盘基板CMP中的重要性,指出浆料的化学成份是化学作用的关键.通过分析氧化剂、pH值、活性剂及螯合剂的影响作用,研制了新型碱性浆料,其中磨料为硬度较小粒径40 nm的SiO2水溶胶,氧化剂为H2O2,FA/O活性荆与螯合剂,并首次选用有机碱作为pH值调节剂.利用配制的抛光液通过CMP实验确定氧化剂含量为15 ml/,L,pH值为11,磨料浓度为20%时,获得的速率可达550 nm/min以上,粗糙度降至1.1 nm.
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| 关 键 词： | 硬盘基板 化学机械抛光 浆料 机理 去除速率 粗糙度 |
NiP Substrate CMP Mechanism and Technique of Comquter Hard Disk |
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| TIAN Jun,LIU Yu-ling,TAN Bai-mei,NIU Xin-huan,TANG Wen-dong.NiP Substrate CMP Mechanism and Technique of Comquter Hard Disk[J].Microfabrication Technology,2008(3). |
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| Authors: | TIAN Jun LIU Yu-ling TAN Bai-mei NIU Xin-huan TANG Wen-dong |
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| Affiliation: | TIAN Jun,LIU Yu-ling,TAN Bai-mei,NIU Xin-huan,TANG Wen-dong(Institute of Microelectronics Technology , Materials,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | The aluminium alloy coated with NiP layer is selected as computer disk substrate mostly at present,and the chemical mechanical polishing(CMP) technique is always used for the finishing polish of substrate.In this paper,the chemical character of NiP substrate of computer disk was analyzed,and the CMP mechanism was discussed.It was pointed that chemical reaction rate is the slow process,which determines the CMP removal rate.So the key factor of influencing CMP removal rate is how to perform the complex reacti... |
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| Keywords: | hard-disk substrate chemical mechanical polishing(CMP) slurry mechanism removal rate roughness |
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