Monitoring of TiSi2 formation on narrow polycrystallinesilicon lines using Raman spectroscopy |
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| Authors: | Lim E.H. Karunasiri G. Chua S.J. Wong H. Pey K.L. Lee K.H. |
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| Affiliation: | Center for Optoelectron., Nat. Univ. of Singapore ; |
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| Abstract: | Micro-Raman spectroscopy is used to monitor titanium silicide (TiSi2) formation on narrow undoped polycrystalline silicon lines. Linewidths varying from 1.0 μm down to 0.35 μm, with silicidation by rapid thermal anneal (RTA) temperature ranging between 780°C and 1020°C were analyzed. Phase changes between C49 and C54-TiSi2 phases were clearly observed. Results demonstrate that analysis of the C54-TiSi2 Raman peak intensity allowed fast and nondestructive estimation of the process window for low resistivity C54-TiSi2 formation. Comparison with sheet resistivity measurements showed that micro-Raman scattering provides a complimentary means to electrical analysis for the study of TiSi2 formation |
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