Effect of Se flux on CuIn1‐xGaxSe2 film in reactive sputtering process |
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| Authors: | Nae‐Man Park Ho Sub Lee Dae‐Hyung Cho Yong‐Duck Chung Kyung‐Hyun Kim Kyu‐Seok Lee Jeha Kim |
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| Affiliation: | 1. Convergence Components & Materials Laboratory, Electronics and Telecommunications Research Institute, Daejeon, 305‐700 Korea;2. Nae‐Man Park, Convergence Components & Materials Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong‐dong, Yuseong‐gu, Daejeon 305–700, Korea.;3. E‐mail: nmpark@etri.re.krs;4. Department of Electronics Engineering, Dankook University, Cheonan, 330‐714 Korea |
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| Abstract: | CuIn1‐xGaxSe2 (CIGS) thin films were grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker was used to deliver reactive Se molecules. The Cu0·6 Ga0·4 and Cu0·4In0·6 targets were simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on CIGS film deposition were investigated. The CIGS film growth rate decreased, and the surface roughness of a film increased as the Se flux increased. The 112] crystal orientation was dominant, and metallic crystal phases such as Cu9Ga4 and Cu16In9 in a film were disappearing with increasing Se flux. A solar cell fabricated using a 900‐nm CIGS film showed the power conversion efficiency of 8·6%, the highest value found in a sub‐micron thick CIGS solar cell related to a reactive sputtering process with metallic targets. Copyright © 2011 John Wiley & Sons, Ltd. |
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| Keywords: | Cu(In Ga)Se2 reactive sputtering chalcopyrite solar cell sub‐micron thin film metal target |
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