Global modeling of nonlinear circuits using the finite‐difference Laguerre time‐domain/alternative direction implicit finite‐difference time‐domain method with stability investigation

This paper describes a new unconditionally stable numerical method for the full‐wave physical modeling of semiconductor devices by a combination of the finite‐difference Laguerre time‐domain (FDLTD) and alternative direction implicit finite‐difference time‐domain (ADI‐FDTD) approaches. The unconditionally stable method by using FDLTD scheme for the electromagnetic model and semi‐implicit ADI‐FDTD approach for the active model leads to a significant decrease in the full‐wave simulation time. Numerical simulations of an example transistor and a power amplifier show the efficiency of presented method for the full‐wave simulation of mm‐wave active circuits. Copyright © 2012 John Wiley & Sons, Ltd.