| 沟槽型MOSFET的发展 |
| |
| 引用本文： | 王翠霞,范学峰,许维胜,谢福渊.沟槽型MOSFET的发展[J].通信电源技术,2009,26(1):72-74. |
| |
| 作者姓名： | 王翠霞 范学峰 许维胜 谢福渊 |
| |
| 作者单位： | 1. 同济大学,上海,200092,中国
2. FORCE MOS技术有限公司,台北,000300,中华台北 |
| |
| 摘 要： | 在功率变换器中沟槽型MOSFET取代功率二极管传递能量有两个优点：可以用PWM驱动电路灵活地控制MOSFET为不同的负载提供所需的能量；导通电阻低，能耗小。文章介绍了新研究出来的厚栅氧MOSFET，RSOMOSFET，集成肖特基二极管的沟槽型MOSFET，并对它们的机理和性能进行了阐述和分析。
|
| 关 键 词： | 沟槽型MOSFET 厚栅氧 MOSFET RSO MOSFET 肖特基二极管 |
Development of Trench MOSFET |
| |
| WANG Cui-xia,FAN Xue-feng,XU Wei-sheng,XIE Fu-yuan.Development of Trench MOSFET[J].Telecom Power Technologies,2009,26(1):72-74. |
| |
| Authors: | WANG Cui-xia FAN Xue-feng XU Wei-sheng XIE Fu-yuan |
| |
| Affiliation: | WANG Cui xia , FAN Xue-feng, XU Wei-sheng , XIE Fu-yuan (l. Tongji University, Shanghai 200092 ,China; 2. Force MOS Technology Co. Ltd, Taipei, 000300 , Chinese Taipei) |
| |
| Abstract: | Trench MOSFET shows two advantages while replacing the rectifier diode in the power converter: it can be controlled flexibly by the PWM driver to provide the desired energy for different loads ; it greatly reduces the conduction loss and the conduction resistance is low.In this paper, the newly devoloped configurations of Trench MOSFET are introduced, which includes thick oxide MOSFET, Resurf stepped oxide MOSFET, Trench MOSFET integrated Schottky diode. The mechanism and the performance of them are also discussed. |
| |
| Keywords: | MOSFET RSOMOSFET trench MOSFET thick oxide MOSFET resurf stepped oxide MOSFET schottky diode |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
