The high temperature creep behavior of doped tungsten wire

The creep behavior of 0.018 cm diam doped tungsten wire has been studied over a range of stress from 30 to 90 MPa and temperature from 2400 to 2800 K. Grain aspect ratio (gar) had a strong influence on creep and rupture of the recrystallized wires, and separated the creep behavior into two regimes with a transitional gar of about 11 between the two. The low gar regime showed lower strength and characteristics typical of grain boundary sliding. In the high gar regime, properties were independent of gar, and evi-dence is presented to show that creep is governed by dislocation-bubble dispersion strengthening. Formerly with the Lamp Business Division of General Electric Company, E. Cleveland, Ohio