Wafer-level reliability characterization for wafer-level-packaged microbolometer with ultrasmall array size |
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Authors: | Chung Mo Yang Ho Jung Jae Hong Park Hee Yeoun Kim |
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Affiliation: | 1. National Nano Fab Center, 335 Gwahangro Yuseong-gu, Daejeon, 305-701, Korea
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Abstract: | For the development of a small and low-cost microbolometer, wafer-level reliability characterization techniques for vacuum-level packaged wafers are introduced. Amorphous-silicon-based microbolometer-type vacuum sensors fabricated on an 8-inch wafer are bonded with a cap wafer by using an Au–Sn eutectic solder. Membrane deflection and integrated vacuum sensor techniques are independently used to characterize the hermeticity at the wafer level. For a packaged wafer with a membrane thickness below 100 μm, it is possible to determine the hermeticity via a screening test performed using an optical detector. An integrated vacuum sensor having the same structure as a bolometer pixel shows a vacuum level below 100 mTorr. All steps from the packaging process to the fine hermeticity test are implemented at the wafer level to verify that high-volume and low-cost production of the microbolometer is possible. |
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